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    DSI45-08A 0.001 0.01 0.1 1 200 240 280 320 360 400 2345678901 1 0 200 400 600 800 1000 1200 VR = 0 V 0.5 1.0 1.5 0 10 20 [A] 30 40 50 60 70 80 0 1020304050 0 50 100 150 200 0 20 40 60 80 1 10 100 1000 10000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 I2t [A2s] IFSM [A] IF VF [ t [s] V] Ptot [W] IdAVM [A] Tamb [°C] t[ms] Zth [K/W] 0 50 100 150 200 0 20 40 60 80 TC [°C] 50 Hz, 80% VRRM TVJ = 45°C TVJ = 45°C TVJ = 150°C TVJ = 150°C t[ms] IdAVM [A] Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current Fig. 3 I2t versus time per diode Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current vs. case temperature Fig. 6 Transient thermal impedance junction to case TVJ = 150°C 125°C 25°C DC = 1 0.5 0.4 0.33 0.17 0.08 RthJA: 0.6 KW 0.8 KW 1 KW 2 KW 4 KW 8 KW DC = 1 0.5 0.4 0.33 0.17 0.08 i 1 2 3 4 Ri 0.033 0.095 0.164 0.258 ti 0.0006 0.0039 0.033 0.272 Rectifier IXYS reserves the right to change limits, conditions and dimensions. 20130215d Data according to IEC 60747and per semiconductor unless otherwise specified ? 2013 IXYS all rights reserved |
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